160 nm to 850 nm response (multialkali) 51 mm (2 inch) diameter, 10-stage, head-on type characteristics (at 25 c) information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?010 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office. general maximum ratings (absolute maximum values) photomultiplier tube r375 parameter min. unit cathode sensitivity anode sensitivity gain anode dark current (after 30 min. storage in darkness) time response luminous (2856 k) radiant at 420 nm red/white ratio (r-68) luminous (2856 k) radiant at 420 nm anode pulse rise time electron transit time 80 20 150 64 0.2 80 3.4 10 4 5.3 10 5 5 9.0 70 a/lm ma/w a/lm a/w na ns ns 20 typ. max. parameter unit spectral response* wavelength of maximum response photocathode window material dynode operating ambient temperature storage temperature base suitable socket materiai minimum effective area structure number of stages 160 to 850 420 multialkali 46 synthetic silica box and grid 10 -30 to +50 -80 to +50 15-pin glass base e678-15c (supplied) nm nm mm c c description / value parameter unit supply voltage average anode current between anode and cathode between anode and last dynode 1500 250 0.1 v v ma value note: anode characteristics are measured with the voltage distribution ratio shown below. supply voltage: 1000 v dc, k: cathode, dy: dynode, p: anode voltage distribution ratio and supply voltage electrodes ratio k g dy1 1 dy2 1 dy3 1 dy4 dy5 1 dy6 1 dy7 11 dy8 dy9 dy10 p 11111 * operate in a nitrogen-purged environment for vuv detection.
tpmh1246e04 dec. 2010 ip figure 1: typical spectral response tpmhb0643ea figure 2: typical gain characteristics tpmhb0598ea figure 3: dimensional outline and basing diagram (unit: mm) tpmha0211ea tacca0201ea socket e678-15c (supplied) 200 800 600 400 0.01 0.1 1 10 100 wavelength (nm) cathode radiant sensitivity (ma/w) quantum efficiency (%) 1000 cathode radiant sensitivity quantum efficiency 500 600 700 800 1000 1200 1400 10 7 10 6 10 5 10 4 10 3 10 2 supply voltage (v) gain 5 6 1 2 3 4 7 8 9 10 11 12 13 14 15 dy4 dy6 k dy10 ic dy7 dy5 dy3 dy1 dy8 g dy2 p ic dy9 short pin faceplate photo- cathode 51.0 1.5 46 min. 112 2 13 max. 15 pin base 50 60 40 4 45 5 2 5 11.5 40 hamamatsu photonics k.k. hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 u.s.a.: hamamatsu corporation: 360 foothill road, p. o. box 6910, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fa x: (1)908-231-1218 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, f ax: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (3 3)1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road welwyn garden city hertfordshire al7 1bw, united kingdom, teleph one: 44-(0)1707-294888, fax: 44(0)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171-41 solna, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e-mail: info@hamamatsu.se italy: hamamatsu photonics italia: s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39)02-935 81 733, fax: (39)02-935 81 741 e-mail: info@hamamatsu.it www.hamamatsu.com photomultiplier tube r375
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